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| MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF316/D NPN Silicon RF Power Transistor . . . designed primarily for wideband large-signal output amplifier stages in the 30 - 200 MHz frequency range. * Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 80 Watts Minimum Gain = 10 dB * Built-In Matching Network for Broadband Operation * 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR * Gold Metallization System for High Reliability Applications MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -- Continuous Collector Current -- Peak Total Device Dissipation @ TC = 25C (1) Derate above 25C Storage Temperature Range Symbol VCEO VCBO VEBO IC PD Tstg Value 35 65 4.0 9.0 13.5 220 1.26 - 65 to +150 Unit Vdc Vdc Vdc Adc Watts W/C C MRF316 80 W, 3.0 - 200 MHz CONTROLLED "Q" BROADBAND RF POWER TRANSISTOR NPN SILICON CASE 316-01, STYLE 1 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RJC Max 0.8 Unit C/W ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 50 mAdc, IB = 0) Collector-Emitter Breakdown Voltage (IC = 50 mAdc, VBE = 0) Collector-Base Breakdown Voltage (IC = 50 mAdc, IE = 0) Emitter-Base Breakdown Voltage (IE = 5.0 mAdc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO ICBO 35 65 65 4.0 -- -- -- -- -- -- -- -- -- -- 5.0 Vdc Vdc Vdc Vdc mAdc ON CHARACTERISTICS DC Current Gain (IC = 4.0 Adc, VCE = 5.0 Vdc) hFE 10 -- 80 -- DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 28 Vdc, IE = 0, f = 1.0 MHz) Cob -- 100 130 pF NOTE: (continued) 1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier. REV 7 (c)MOTOROLA RF DEVICE DATA Motorola, Inc. 1997 MRF316 1 ELECTRICAL CHARACTERISTICS -- continued (TC = 25C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit NARROW BAND FUNCTIONAL TESTS (Figure 1) Common-Emitter Amplifier Power Gain (VCC = 28 Vdc, Pout = 80 W, f = 150 MHz) Collector Efficiency (VCC = 28 Vdc, Pout = 80 W, f = 150 MHz) Load Mismatch (VCC = 28 Vdc, Pout = 80 W CW, f = 150 MHz, VSWR = 30:1 all phase angles) GPE No Degradation in Output Power 10 55 13 -- -- -- dB % R2 R3 RFC6 + 28 Vdc C13 RFC5 DUT C1 RF INPUT C2 C3 C4 L1 RFC4 C9 C8 C10 C11 RF OUTPUT L2 C12 C5 RFC1 C6 RFC2 C7 RFC3 R1 C1 -- 22 pF 100 mil ATC C2, C3 -- 24 pF 100 mil ATC C4, C11 -- 0.8 - 20 pF JMC #5501 Johanson C5 -- 200 pF 100 mil ATC C6 -- 240 pF 100 mil ATC C7 -- Dipped Mica 1000 pF C8 -- 0.1 F Erie Red Cap C9, C10, C12 -- 30 pF 100 mil ATC C13 -- 1.0 F Tantalum L1 -- 0.8, #20 Wire L2 -- 1.0, #20 Wire RFC1, RFC4 -- 0.15 H Molded Coil RFC2, RFC3 -- Ferroxcube Bead 56-590-65-3B RFC5 -- 2.5, #20 Wire, 1.5 Turns RFC6 -- Ferroxcube VK200-19/4B R1 -- 10 , 1/2 W R2, R3 -- 10 , 1.0 W Figure 1. 150 MHz Test Amplifier MRF316 2 MOTOROLA RF DEVICE DATA TYPICAL PERFORMANCE CURVES GPE, COMMON EMITTER POWER GAIN (dB) 140 VCC = 28 V Pout , OUTPUT POWER (WATTS) 120 100 80 60 40 20 0 0.2 0.3 0.4 0.5 1 2 0.7 3 Pin, INPUT POWER (WATTS) 45 7 10 50 MHz 100 MHz 150 MHz 200 MHz f = 30 MHz 26 Pout = 80 W VCC = 28 V 22 18 14 10 6 20 60 100 140 f, FREQUENCY (MHz) 180 220 Figure 2. Output Power versus Input Power Figure 3. Power Gain versus Frequency 130 Pin = 8 W Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) 6W 4W 90 2W 110 120 Pin = 8 W 6W 4W 100 80 2W 70 60 50 f = 100 MHz 30 12 16 20 24 VCC, SUPPLY VOLTAGE (VOLTS) 28 40 f = 150 MHz 20 12 16 20 24 VCC, SUPPLY VOLTAGE (VOLTS) 28 Figure 4. Output Power versus Supply Voltage Figure 5. Output Power versus Supply Voltage 110 Pout , OUTPUT POWER (WATTS) Pin = 8 W 90 6W 4W 70 2W 50 30 f = 200 MHz 10 12 16 20 24 VCC, SUPPLY VOLTAGE (VOLTS) 28 Figure 6. Output Power versus Supply Voltage MOTOROLA RF DEVICE DATA MRF316 3 1.0 2.0 3.0 0 1.0 Zin 200 100 1.0 2.0 3.0 125 150 4.0 50 f = 30 MHz 175 150 125 100 200 3.0 2.0 175 VCC = 28 V, Pout = 80 W 4.0 5.0 6.0 7.0 f MHz 30 50 100 125 150 175 200 Zin OHMS 1.2 - j2.4 1.1 - j2.2 0.3 + j0.7 0.6 + j1.2 0.9 + j1.6 2.2 + j0.3 0.3 + j0.8 ZOL* OHMS 5.5 - j6.8 4.5 - j6.0 2.7 - j3.5 2.3 - j2.6 2.0 - j1.7 1.9 - j1.3 2.0 - j0.9 ZOL* 50 8.0 f = 30 MHz 9.0 ZOL* = Conjugate of the optimum load impedance into which the device output operates at a given output power, voltage and frequency. Figure 7. Series Equivalent Input-Output Impedance MRF316 4 MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS D R 3 F 4 K NOTES: 1. FLANGE IS ISOLATED IN ALL STYLES. INCHES MIN MAX 24.38 25.14 12.45 12.95 5.97 7.62 5.33 5.58 2.16 3.04 5.08 5.33 18.29 18.54 0.10 0.15 10.29 11.17 3.81 4.06 3.81 4.31 2.92 3.30 3.05 3.30 11.94 12.57 MILLIMETERS MIN MAX 0.960 0.990 0.490 0.510 0.235 0.300 0.210 0.220 0.085 0.120 0.200 0.210 0.720 0.730 0.004 0.006 0.405 0.440 0.150 0.160 0.150 0.170 0.115 0.130 0.120 0.130 0.470 0.495 1 Q 2 L B J E N H A U STYLE 1: PIN 1. 2. 3. 4. C DIM A B C D E F H J K L N Q R U EMITTER COLLECTOR EMITTER BASE CASE 316-01 ISSUE D MOTOROLA RF DEVICE DATA MRF316 5 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Literature Distribution Centers: USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England. JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. MRF316 6 *MRF316/D* MRF316/D MOTOROLA RF DEVICE DATA |
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